Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-03-01

2011-03-01

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21600

Reexamination Certificate

active

07897482

ABSTRACT:
A separation layer containing a halogen element is formed over a glass substrate by a plasma CVD method; a semiconductor element is formed over the separation layer; and separation is then performed inside the separation layer or at its interface, so that the large-area glass substrate and the semiconductor element are detached from each other. In order to perform detachment at the interface between the glass substrate and the separation layer, the separation layer may have concentration gradient of the halogen element, and the halogen element is contained more near the interface between the separation layer and the glass substrate than in the other areas.

REFERENCES:
patent: 2814601 (1957-11-01), Currie et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 6218499 (2001-04-01), Tarumi et al.
patent: 6875674 (2005-04-01), Asami et al.
patent: 6984476 (2006-01-01), Kobayashi et al.
patent: 7351300 (2008-04-01), Takayama et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2004/0185673 (2004-09-01), Ichijo et al.
patent: 2006/0270195 (2006-11-01), Yamada et al.
patent: 2007/0004233 (2007-01-01), Morisue et al.
patent: 2008/0102536 (2008-05-01), Toriumi
patent: 2009/0042387 (2009-02-01), Yamada et al.
patent: 2001-189460 (2001-07-01), None
patent: 2003-174153 (2003-06-01), None
K. L. Yeo et al., “SIMS Backside Depth Profiling of Ultrashallow Implants Using Silicon-on-Insulator Substrates”,Surface and Interface Analysis, 2002, pp. 373-375, vol. 33.

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