Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-06-28
2011-06-28
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S083000, C257S257000, C257S290000, C257SE31059
Reexamination Certificate
active
07968890
ABSTRACT:
By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.
REFERENCES:
patent: 4394182 (1983-07-01), Maddox, III
patent: 5247190 (1993-09-01), Friend et al.
patent: 5292675 (1994-03-01), Codama
patent: 5323042 (1994-06-01), Matsumoto
patent: 5399502 (1995-03-01), Friend et al.
patent: 5528397 (1996-06-01), Zavracky et al.
patent: 5532176 (1996-07-01), Katada et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5668379 (1997-09-01), Ono et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5705424 (1998-01-01), Zavracky et al.
patent: 5736750 (1998-04-01), Yamazaki et al.
patent: 5739549 (1998-04-01), Takemura et al.
patent: 5760854 (1998-06-01), Ono et al.
patent: 5830787 (1998-11-01), Kim
patent: 5834816 (1998-11-01), Jang
patent: 5877530 (1999-03-01), Aronowitz et al.
patent: 5907177 (1999-05-01), Uda et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 5949107 (1999-09-01), Zhang
patent: 6001714 (1999-12-01), Nakajima et al.
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 6046474 (2000-04-01), Oh et al.
patent: 6093457 (2000-07-01), Okumura et al.
patent: 6115094 (2000-09-01), Fukunaga
patent: 6153445 (2000-11-01), Yamazaki et al.
patent: 6153893 (2000-11-01), Inoue et al.
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6168958 (2001-01-01), Gardner et al.
patent: 6172671 (2001-01-01), Shibuya et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6207995 (2001-03-01), Gardner et al.
patent: 6215154 (2001-04-01), Ishida et al.
patent: 6246070 (2001-06-01), Yamazaki et al.
patent: 6255705 (2001-07-01), Zhang et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6380561 (2002-04-01), Ohtani et al.
patent: 6400426 (2002-06-01), Yamazaki et al.
patent: 6541294 (2003-04-01), Yamazaki et al.
patent: 6639265 (2003-10-01), Arao et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6664145 (2003-12-01), Yamazaki et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 6967696 (2005-11-01), Yamazaki et al.
patent: 7675583 (2010-03-01), Yamazaki et al.
patent: 2010/0134709 (2010-06-01), Yamazaki et al.
patent: 4-369271 (1992-12-01), None
patent: 5-102483 (1993-04-01), None
patent: 6-148685 (1994-05-01), None
patent: 7-130652 (1995-05-01), None
patent: 7-235680 (1995-09-01), None
patent: 8-78329 (1996-03-01), None
patent: 8-274336 (1996-10-01), None
patent: 9-55508 (1997-02-01), None
patent: 9-191111 (1997-07-01), None
patent: 9-279367 (1997-10-01), None
patent: 9-293600 (1997-11-01), None
patent: 10-92576 (1998-04-01), None
patent: 10-104659 (1998-04-01), None
patent: 10-125928 (1998-05-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-233511 (1998-09-01), None
patent: 10-288797 (1998-10-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
patent: WO 90/13148 (1990-11-01), None
Wolf, S. et al,Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, Fig. 12 on p. 263 and p. 264.
Shimokawa, R. et al, “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, May 1988, pp. 751-758.
Hatano, M. et al, “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance,” IEEE, IEDM-97, Dec. 1997, pp. 523-526.
Schenk, H. et al, “Polymers for Light Emitting Diodes,” Eurodisplay '99, Proceedings of the 19thInternational Display Research Conference, Berlin, Germany, Sep. 6-9, 1999, pp. 33-37.
Arai Yasuyuki
Ono Koji
Suzawa Hideomi
Yamazaki Shunpei
Husch & Blackwell LLP
Louie Wai-Sing
Semiconductor Energy Laboratory Co,. Ltd.
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