Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-04-05
2011-04-05
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S057000, C257S261000, C257SE21680, C257SE21683, C257SE27075, C438S082000, C438S099000
Reexamination Certificate
active
07919772
ABSTRACT:
A nonvolatile memory has a problem in that applied voltage is high. This is because a carrier needs to be injected into a floating gate through an insulating film by a tunneling effect. In addition, there is concern about deterioration of the insulating film by performing such carrier injection. An object of the present invention is to provide a memory in which applied voltage is lowered and deterioration of an insulating film is prevented. One feature is to use a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound as a layer functioning as a floating gate of a memory. A specific example is an element having a transistor structure where a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound and which is sandwiched between insulating layers is used as a floating gate.
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Furukawa Shinobu
Imahayashi Ryota
Gebreyesus Yosef
Gurley Lynne A
Husch & Blackwell LLP
Semiconductor Energy Laboratory Co,. Ltd.
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