Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-04-05

2011-04-05

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S057000, C257S261000, C257SE21680, C257SE21683, C257SE27075, C438S082000, C438S099000

Reexamination Certificate

active

07919772

ABSTRACT:
A nonvolatile memory has a problem in that applied voltage is high. This is because a carrier needs to be injected into a floating gate through an insulating film by a tunneling effect. In addition, there is concern about deterioration of the insulating film by performing such carrier injection. An object of the present invention is to provide a memory in which applied voltage is lowered and deterioration of an insulating film is prevented. One feature is to use a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound as a layer functioning as a floating gate of a memory. A specific example is an element having a transistor structure where a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound and which is sandwiched between insulating layers is used as a floating gate.

REFERENCES:
patent: 5640345 (1997-06-01), Okuda et al.
patent: 5888868 (1999-03-01), Yamazaki et al.
patent: 6198125 (2001-03-01), Yamazaki et al.
patent: 6448135 (2002-09-01), Yamazaki et al.
patent: 6486601 (2002-11-01), Sakai et al.
patent: 6556475 (2003-04-01), Yamazaki et al.
patent: 6589673 (2003-07-01), Kido et al.
patent: 6646922 (2003-11-01), Kato
patent: 6734492 (2004-05-01), Yamazaki et al.
patent: 6914818 (2005-07-01), Yamazaki et al.
patent: 6947321 (2005-09-01), Tanabe
patent: 6947327 (2005-09-01), Kato
patent: 2002/0045289 (2002-04-01), Dimitrakopoulos et al.
patent: 2003/0052336 (2003-03-01), Yamazaki et al.
patent: 2003/0092232 (2003-05-01), Klauk et al.
patent: 2003/0218166 (2003-11-01), Tsutsui
patent: 2004/0002176 (2004-01-01), Xu
patent: 2005/0057136 (2005-03-01), Moriya et al.
patent: 2005/0072989 (2005-04-01), Bawendi et al.
patent: 2005/0084712 (2005-04-01), Kido et al.
patent: 2005/0098207 (2005-05-01), Matsumoto et al.
patent: 2005/0151195 (2005-07-01), Kawase et al.
patent: 2005/0170208 (2005-08-01), Yatsunami et al.
patent: 2005/0248267 (2005-11-01), Gyoutoku et al.
patent: 2006/0237731 (2006-10-01), Furukawa et al.
patent: 2007/0102673 (2007-05-01), Durrant et al.
patent: 2007/0164272 (2007-07-01), Yang et al.
patent: 2008/0048183 (2008-02-01), Ohsawa et al.
patent: 5-198809 (1993-08-01), None
patent: 7-153858 (1995-06-01), None
patent: 9-63771 (1997-03-01), None
patent: 11-307259 (1999-11-01), None
patent: 2004-47791 (2004-02-01), None
patent: 2004-140413 (2004-05-01), None
patent: 2005-026121 (2005-01-01), None
International Search Report re application No. PCT/JP2005/022989, dated Mar. 20, 2006.
Written Opinion re application No. PCT/JP2005/022989, dated Mar. 20, 2006.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2698565