Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-03-10
2011-10-04
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE21697, C257SE27012, C257SE27081, C438S171000
Reexamination Certificate
active
08030691
ABSTRACT:
An MMIC100is a semiconductor device which includes an FET formed on a GaAs substrate10and an MIM capacitor having a dielectric layer20barranged between a lower electrode18band an upper electrode22b. A method for manufacturing the MMIC100is provided, in which a source electrode16aand a drain electrode16bof the FET are formed and then a gate electrode18aof the FET and a lower electrode18bof the MIM capacitor are formed simultaneously by the lift-off method.
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Office Action issued Mar. 16, 2010 in Japanese Application No. 2007-070052.
Blum David S
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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