Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2008-09-26

2011-10-18

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257SE23085, C257SE25006, C257SE25013, C257SE25021, C257SE25027

Reexamination Certificate

active

08039943

ABSTRACT:
A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.

REFERENCES:
patent: 6489676 (2002-12-01), Taniguchi et al.
patent: 7589410 (2009-09-01), Kim
patent: 7667338 (2010-02-01), Lin et al.
patent: 7671457 (2010-03-01), Hiner et al.
patent: 2002/0060361 (2002-05-01), Sasaki

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