Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-07-05
2009-10-13
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S734000
Reexamination Certificate
active
07602063
ABSTRACT:
In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.
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Machine Translation of JP 2000-340569.
Machine Translation of JP 2002-329718.
M. Inohara, et al., “High Performance Copper and Low-k Interconnect Technology Fully Compatible to 90nm-node SOC Application (CMOS4)”, Technical Digest of 2002 IEDM, pp. 77-80.
Furusawa Takeshi
Goto Kinya
Matsuura Masazumi
Miura Noriko
Ho Anthony
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Parker Kenneth A
Renesas Technology Corp.
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