Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-03-23
2008-08-26
Schillinger, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S069000
Reexamination Certificate
active
07417253
ABSTRACT:
An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.
REFERENCES:
patent: 4357557 (1982-11-01), Inohara et al.
patent: 4658496 (1987-04-01), Beinvogl et al.
patent: 4753896 (1988-06-01), Matloubian
patent: 5028564 (1991-07-01), Chang et al.
patent: 5072263 (1991-12-01), Watanabe et al.
patent: 5107175 (1992-04-01), Hirano et al.
patent: 5124204 (1992-06-01), Yamashita et al.
patent: 5189405 (1993-02-01), Yamashita et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5401982 (1995-03-01), King et al.
patent: 5405791 (1995-04-01), Ahmad et al.
patent: 5518940 (1996-05-01), Hodate et al.
patent: 5576556 (1996-11-01), Takemura et al.
patent: 5593907 (1997-01-01), Anjum et al.
patent: 5612234 (1997-03-01), Ha
patent: 5620905 (1997-04-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5686360 (1997-11-01), Harvey, III et al.
patent: 5693956 (1997-12-01), Shi et al.
patent: 5710606 (1998-01-01), Nakajima et al.
patent: 5719065 (1998-02-01), Takemura et al.
patent: 5736414 (1998-04-01), Yamaguchi
patent: 5757126 (1998-05-01), Harvey, III et al.
patent: 5771562 (1998-06-01), Harvey, III et al.
patent: 5786620 (1998-07-01), Richards, Jr. et al.
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5801416 (1998-09-01), Choi et al.
patent: 5811177 (1998-09-01), Shi et al.
patent: 5827747 (1998-10-01), Wang et al.
patent: 5869929 (1999-02-01), Eida et al.
patent: 5882761 (1999-03-01), Kawami et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5926735 (1999-07-01), Yamazaki et al.
patent: 5929483 (1999-07-01), Kim et al.
patent: 5952778 (1999-09-01), Haskal et al.
patent: 5956588 (1999-09-01), Choi et al.
patent: 5959313 (1999-09-01), Yamazaki et al.
patent: 5962962 (1999-10-01), Fujita et al.
patent: 5973258 (1999-10-01), Shiotsuka et al.
patent: 5990542 (1999-11-01), Yamazaki
patent: 5998805 (1999-12-01), Shi et al.
patent: 6046547 (2000-04-01), Nishio et al.
patent: 6114183 (2000-09-01), Hamada et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6146225 (2000-11-01), Sheats et al.
patent: 6149757 (2000-11-01), Chikaki et al.
patent: 6150187 (2000-11-01), Zyung et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6198217 (2001-03-01), Suzuki et al.
patent: 6198220 (2001-03-01), Jones et al.
patent: 6200836 (2001-03-01), Yoo
patent: 6207519 (2001-03-01), Kim et al.
patent: 6215155 (2001-04-01), Wollesen
patent: 6239470 (2001-05-01), Yamazaki et al.
patent: 6268071 (2001-07-01), Yasukawa et al.
patent: 6268695 (2001-07-01), Affinito
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6277679 (2001-08-01), Ohtani
patent: 6280559 (2001-08-01), Terada et al.
patent: 6320115 (2001-11-01), Kataoka et al.
patent: 6323416 (2001-11-01), Komori et al.
patent: 6330044 (2001-12-01), Murade
patent: 6333603 (2001-12-01), Juang et al.
patent: 6348382 (2002-02-01), Su et al.
patent: 6365917 (2002-04-01), Yamazaki
patent: 6380558 (2002-04-01), Yamazaki et al.
patent: 6413645 (2002-07-01), Graff et al.
patent: 6420200 (2002-07-01), Yamazaki et al.
patent: 6432561 (2002-08-01), Yamazaki
patent: 6433487 (2002-08-01), Yamazaki
patent: 6440877 (2002-08-01), Yamazaki et al.
patent: 6441468 (2002-08-01), Yamazaki
patent: 6447867 (2002-09-01), Kominami et al.
patent: 6469317 (2002-10-01), Yamazaki et al.
patent: 6501098 (2002-12-01), Yamazaki
patent: 6524895 (2003-02-01), Yamazaki et al.
patent: 6555969 (2003-04-01), Yamazaki et al.
patent: 6605826 (2003-08-01), Yamazaki et al.
patent: 6617644 (2003-09-01), Yamazaki et al.
patent: 6645826 (2003-11-01), Yamazaki et al.
patent: 6770502 (2004-08-01), Cok et al.
patent: 2002/0125817 (2002-09-01), Yamazaki et al.
patent: 07-130652 (1995-05-01), None
patent: 08-068990 (1996-03-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-096959 (1996-04-01), None
patent: 09-148066 (1997-06-01), None
patent: 10-92576 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-270363 (1998-10-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
patent: WO 90/13148 (1990-11-01), None
U.S. Appl. No. 09/432,662, Specification & Drawings.
U.S. Appl. No. 09/435,154, Specification & Drawings with Pending Claims.
Official Communication issued May 8, 2007 in counterpart Application No. 99121683.9; EP4018/4022.
Wei, C., et al., “Buried and Graded/Buried LDD Structures for Improved Hot-Electron Reliability”, IEEE Electron Device Letters, vol. EDL-7, No. 6, pp. 380-382, Jun. 1986.
Solar Cell Handbook, Institute of Electrical Engineers of Japan, Investigation Committee of a Solar Cell ed., pp. 165-166, 1985 with “Concise Statement.”
Hatano et al., “A Novel Self-aligned Gate-overlapped LDD Poly-Si TFT with High Reliability and Performance”, pp. 523-526, Dec. 7-10, 1997, Internl. Elec. Devices Meeting (IEDM) 1997.
Shimokawa et al., “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” pp. 751-758, May 1988, Japanese Journal of Applied Physics, vol. 27, No. 5.
Schnek et al., “Polymers for Light Emitting Diodes”, pp. 33-37, Sep. 6-9, 1999, EuroDisplay '99, The 19thInternational Display Research Conference, Berlin, Germany.
U.S. Appl. No. 09/436,984, Specification, Drawings and Preliminary Amendment.
European Search Report for parent application Ser. No. 99121683.9-2203-;7 pages; Date of Search: Apr. 18, 2000; Date of Mailing: May 9, 2000; Place of Search: Berlin.
Hamatani Toshiji
Ohtani Hisashi
Yamazaki Shunpei
Costellia Jeffrey L.
Nixon & Peabody LLP
Schillinger Laura M
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4009530