Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2006-10-17
2008-07-01
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S183000, C257S201000, C257S615000, C257SE33049
Reexamination Certificate
active
07394114
ABSTRACT:
A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
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Hanamaki Yoshihiko
Ono Ken'ichi
Takada Makoto
Takemi Masayoshi
Leydig , Voit & Mayer, Ltd.
Mandala Jr. Victor A.
Mitsubishi Electric Corporation
Pert Evan
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