Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2006-06-20

2006-06-20

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S186000, C438S197000, C438S294000

Reexamination Certificate

active

07064041

ABSTRACT:
To provide a semiconductor device that permits free setting of characteristics of individual semiconductor elements which are mixedly mounted and have different characteristics, and is free of steps between formed semiconductor elements, in a manufacturing method for the semiconductor device, an n-type silicon layer is deposited on a p-type silicon substrate by epitaxial growth, and then an SOI layer is deposited thereon through the intermediary of a BOX layer. A junction transistor using a part of the n-type silicon layer as a channel region and a MOS transistor using the SOI layer are produced.

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patent: 6127701 (2000-10-01), Disney
patent: 01-183145 (1989-07-01), None
patent: 02-105565 (1990-04-01), None
patent: 06-334030 (1994-12-01), None

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