Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2005-10-18

2005-10-18

Patel, Nimeshkumar D. (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

C313S498000, C313S509000

Reexamination Certificate

active

06956324

ABSTRACT:
A light weight and a low cost EL display device is provided, in which light emitting elements are formed on a flexible film. A thin metallic substrate is used as an element forming substrate with the present invention, edge portions of the metallic substrate are bent, and the metallic substrate is attached with good adhesion, within a vacuum, to a substrate holder which possesses curvature in its edge portions. After then forming light emitting elements on the thin metallic substrate, the substrate holder is separated.

REFERENCES:
patent: 5986401 (1999-11-01), Thompson et al.
patent: 5998803 (1999-12-01), Forrest et al.
patent: 6262441 (2001-07-01), Böhler et al.
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6284393 (2001-09-01), Hosokawa et al.
patent: 6297495 (2001-10-01), Bulovic et al.
patent: 6307528 (2001-10-01), Yap
patent: 6380007 (2002-04-01), Koyama
patent: 6447612 (2002-09-01), Moriyama et al.
patent: 6515310 (2003-02-01), Yamazaki et al.
patent: 6639354 (2003-10-01), Kojima et al.
patent: 6784037 (2004-08-01), Yamazaki et al.
patent: 6858878 (2005-02-01), Yamazaki et al.
patent: 2005/0001541 (2005-01-01), Yamazaki et al.
C.C. Wu et al; “Integration of Organic LED's and Amorphous Si TFT's onto Unbreakable Metal Foil Substrates”;1996 International Electron Devices Meeting—Technical Digest; pp. 957-959; Dec. 8-11, 1996.
Shunpei Yamazaki et al.; U.S. Appl. No. 09/848,233; filed May 4, 2001 (patent pending).

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3479569