Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-02-22
2005-02-22
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S081000, C257S082000, C257S099000, C257S782000, C372S050121, C372S054000, C385S014000
Reexamination Certificate
active
06858871
ABSTRACT:
A red color laser diode13is die-bonded onto a silicon submount photodiode chip11having a insulating film4on the surface thereof. The silicon submount photodiode chip11receives a light beam radiated from a back side13bof the red color laser diode13for monitoring an output of a light beam radiated from a front side13aof the red color laser diode13. The insulating film4of the silicon submount photodiode chip11is provided with a hole14located beneath an electrode12that die-bonds the red color laser diode13onto the silicon submount photodiode chip11. Heat generated by the red color laser diode13is easily conducted to the silicon submount photodiode chip11through the hole14not covered with the insulating film4and discharged therefrom, which enables prevention of thermal destruction.
REFERENCES:
patent: 4847846 (1989-07-01), Sone et al.
Kang Donghee
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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