Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

1997-12-10

1999-12-21

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

257750, 257765, H01L 23544

Patent

active

060052953

ABSTRACT:
The object of the present invention is to provide a method of manufacturing an improved semiconductor device in which overlay-accuracy can be enhanced even when a halftone mask is used. An oxide film is formed on an antireflection film. Resist films are selectively irradiated with light using a halftone phase shift mask.
Subsequently, it is developed to form resist patterns for a connecting hole and an overlay mark. According to the present invention, the provision of an antireflection film under an oxide film prevents formation of a ghost pattern in an overlay mark portion.

REFERENCES:
patent: 5401691 (1995-03-01), Caldwell
patent: 5475268 (1995-12-01), Kawagoe et al.
patent: 5503962 (1996-04-01), Caldwell
patent: 5760483 (1998-06-01), Bruce et al.
patent: 5760484 (1998-06-01), Lee et al.
patent: 5783490 (1998-07-01), Tseng

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