Semiconductor device and manufacturing method there

Details Semiconductor device and manufacturing method there Semiconductor device and manufacturing method there

2006-11-28

2006-11-28

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

C257S771000, C257S528000, C257S280000, C257SE29338, C438S534000, C438S582000, C438S570000

Reexamination Certificate

active

07141861

ABSTRACT:
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is hereby solved by forming a Schottky barrier diode using a metal layer comprising a Schottky metal layer of Ti including a small amount of Al. Consequently, a low reverse leak current IR can be obtained without causing a large increase in the forward voltage VF of pure Ti such that power consumption can be reduced by suppressing forward power loss and decreasing reverse power loss.

REFERENCES:
patent: 5747361 (1998-05-01), Ouellet
patent: 5789311 (1998-08-01), Ueno et al.
patent: 2003/0040144 (2003-02-01), Blanchard et al.
patent: 2004/0072009 (2004-04-01), Segal et al.
patent: 06-224410 (1994-08-01), None

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