Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2008-04-16

2011-12-13

Pert, Evan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000, C257S766000, C257S768000, C257SE23145, C257SE23152

Reexamination Certificate

active

08076781

ABSTRACT:
A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embeded in opening regions which connect a first wiring layer and a second wiring layer and an opening is formed in a spin coated resin film formed on the first metal layer. In the opening, a Cr layer forming a plating metal layer and a Cu plated layer are connected to each other. With this structure, the spaces among crystal grains in portions in the Cr layer on the first metal layer are wide, which causes the portions to be coarse. In the coarse portions in the Cr layer, an alloy layer formed of the second metal layer and the Cu plated layer is formed, and thus, the connection resistance value is reduced.

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