Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-07-13
2010-11-30
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S616000, C257SE29085, C257SE29189, C257SE21093, C257SE21371, C438S312000, C438S370000, C438S936000
Reexamination Certificate
active
07842973
ABSTRACT:
A semiconductor device capable of avoiding generation of a barrier in a conduction band while maintaining high withstanding voltage and enabling high speed transistor operation at high current in a double hetero bipolar transistor, as well as a manufacturing method thereof, wherein a portion of the base and the collector is formed of a material with a forbidden band width narrower than that of a semiconductor substrate, a region where the forbidden band increases stepwise and continuously from the emitter side to the collector side is disposed in the inside of the base and the forbidden band width at the base-collector interface is designed so as to be larger than the minimum forbidden band width in the base, whereby the forbidden band width at the base layer edge on the collector side can be made closer to the forbidden band width of the semiconductor substrate than usual while sufficiently maintaining the hetero effect near the emitter-base thereby capable of decreasing the height of the energy barrier generated upon increase of the collector current and enabling satisfactory transistor operation at high current.
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Miura Makoto
Shimamoto Hiromi
Washio Katsuyoshi
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Thomas Toniae M
Wilczewski Mary
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