Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-06-04

2009-02-24

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S195000, C257SE21403, C257SE29246

Reexamination Certificate

active

07495268

ABSTRACT:
A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.

REFERENCES:
patent: 2006/0076585 (2006-04-01), Kato et al.
patent: 2006/0273396 (2006-12-01), Anda et al.
patent: 5 121451 (1993-05-01), None
patent: 8 116034 (1996-05-01), None
English language Abstract of JP 8-116034.
English language Abstract of JP 5-121451.
U.S. Appl. No. 11/774,821 to Miyajima et al., which was filed on Jul. 9, 2007.

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