Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-04-10

2007-04-10

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S737000, C257S778000, C257S738000, C257S783000, C257S779000, C257S780000, C257S734000, C257S781000

Reexamination Certificate

active

10986385

ABSTRACT:
A semiconductor device comprises a semiconductor element which is flip-chip bonded to a circuit substrate. The semiconductor element and the circuit substrate are flip-chip bonded using a sealing resin having flux function. The semiconductor element includes a solder bump formed on a first electrode pad through a first low melting point solder layer. The circuit substrate includes a second electrode pad corresponding to the first electrode pad, and a second low melting point solder layer is formed on the second electrode pad. The solder bump is bonded to the first and second electrode pads through the first and second low melting point solder layers.

REFERENCES:
patent: 6204558 (2001-03-01), Yanagida
patent: 6559527 (2003-05-01), Brofman et al.
patent: 2002/0171157 (2002-11-01), Soga et al.
patent: 2003/0011077 (2003-01-01), Morishima et al.
patent: 10-012659 (1998-01-01), None
patent: 10-209626 (1998-08-01), None
patent: 10-294337 (1998-11-01), None
patent: 2000-232119 (2000-08-01), None
patent: 2002-190497 (2002-07-01), None
Notice of Reason of Rejection issued by the Japanese Patent Office on Jul. 25, 2006, for Japanese Application No. 2004-235850, and English-language translation thereof.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3786306