Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2006-06-13

2006-06-13

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S738000, C257S778000, C257S780000, C257S781000, C257S783000, C257S787000

Reexamination Certificate

active

07061107

ABSTRACT:
The invention realizes excellent electrical and mechanical connection between electrodes in a packaging structure where a plurality of semiconductor chips having electrodes are connected with each other through the low-melting metallic members. Bump electrodes are formed on a front surface of a first semiconductor chip. Penetrating holes are formed in a second semiconductor chip, and a penetrating electrode having a gap in a center is formed in each of the penetrating holes. Low-melting metallic members are interposed between connecting surfaces of the bump electrodes and the penetrating electrodes, and a part of each of the low-melting metallic members flows in each of the gaps of the penetrating electrodes when dissolved. This prevents short-circuiting between the bump electrodes which is caused by oversupplying the low-melting metallic members between the adjacent bump electrodes.

REFERENCES:
patent: 5834843 (1998-11-01), Mori et al.
patent: 6590287 (2003-07-01), Ohuchi
patent: 10-012688 (1998-01-01), None

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