Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

1998-08-20

2000-04-25

Niebling, John F.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438320, 438366, H01L 21331

Patent

active

060543582

ABSTRACT:
A partial oxide film on a base region is removed to form an opening, a polycrystalline silicon film is deposited directly thereon, and by dry etching, the polycrystalline silicon film is divided into a region including an impurity of same conductive type as the base, and a region including an impurity of reverse conductive type of the base. By heat treatment, the impurity is diffused from the polycrystalline silicon film into the base region, and an external base diffusion layer and an emitter diffusion layer are formed. In succession, the surface of the polycrystalline silicon film is formed into polyside film to lower the resistance, and by using the polycrystalline silicon film as emitter electrode and base electrode, a fine base and emitter area is realized.

REFERENCES:
patent: 4975381 (1990-12-01), Taka et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5365090 (1994-11-01), Taka et al.
patent: 5432104 (1995-07-01), Sato
patent: 5599723 (1997-02-01), Sato

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