Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2011-07-12

2011-07-12

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

C257S669000, C257SE23039

Reexamination Certificate

active

07977775

ABSTRACT:
The present invention enables improvement of bonding reliability of the conductive adhesive interposed between a semiconductor chip and a die pad portion. Provided is a semiconductor device, in which a silicon chip is mounted over the die pad portion integrally formed with a drain lead, has a source pad over the main surface and a drain electrode of a power MOSFET over the back side, and is bonded onto the die pad portion via an Ag paste. In the device, a source lead and the source pad are electrically coupled via an Al ribbon. Over the back surface of the silicon chip, an Ag nanoparticle coated film is formed, while another Ag nanoparticle coated film is formed over the die pad portion and lead (drain lead and source lead).

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Yasunari Ukita et al., “Application of Conductive Paste Containing Silver Nanoparticles to Power Transistor Package”, 11thSymposium on Microjoining and Assembly Technology in Electronics, Feb. 2005, pp. 233-238.

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