Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2011-04-12

2011-04-12

Lee, Kyung (Department: 2833)

Electrical resistors

Resistance value responsive to a condition

Current and/or voltage

C365S148000

Reexamination Certificate

active

07924138

ABSTRACT:
A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

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