Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2011-03-22

2011-03-22

Smith, Matthew S (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

C257S774000, C257S758000

Reexamination Certificate

active

07911055

ABSTRACT:
In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.

REFERENCES:
patent: 5949143 (1999-09-01), Bang
patent: 6281585 (2001-08-01), Bothra
patent: 6297554 (2001-10-01), Lin
patent: 6406992 (2002-06-01), Mao et al.
patent: 6764950 (2004-07-01), Noguchi et al.
patent: 6800513 (2004-10-01), Horiuchi et al.
patent: 6875686 (2005-04-01), Demolliens et al.
patent: 6890846 (2005-05-01), Noguchi
patent: 2003/0183490 (2003-10-01), Eschenweck
patent: 2003/0183940 (2003-10-01), Noguchi et al.
patent: 2006/0088975 (2006-04-01), Ueda
patent: 2001-085519 (2000-08-01), None
patent: 2003-297918 (2002-03-01), None
patent: 2005-136152 (2003-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2712935