Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-04-26
2011-04-26
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S068000, C438S113000, C438S116000
Reexamination Certificate
active
07932121
ABSTRACT:
A semiconductor device includes a semiconductor element, a transparent member separated from the semiconductor element by a designated length and facing the semiconductor element, a sealing member sealing an edge surface of the transparent member and an edge part of the semiconductor element, and a shock-absorbing member provided between the edge surface of the transparent member and the sealing member and easing a stress which the transparent member receives from the sealing member or the semiconductor element.
REFERENCES:
patent: 5198685 (1993-03-01), Kitani
patent: 6667543 (2003-12-01), Chow
patent: 6825540 (2004-11-01), Harazono
patent: 7001797 (2006-02-01), Hashimoto
patent: 7095123 (2006-08-01), Prior
patent: 2002/0131782 (2002-09-01), Yamaguchi
patent: 2003/0098912 (2003-05-01), Hosokai
patent: 2004/0077118 (2004-04-01), Prior
patent: 2004/0161871 (2004-08-01), Omori
patent: 2005/0095835 (2005-05-01), Humpston
patent: 1 443 755 (2004-08-01), None
patent: 62067863 (1987-03-01), None
patent: 10-144898 (1998-05-01), None
patent: 2000-323692 (2000-11-01), None
patent: 2001-85655 (2001-03-01), None
patent: 2001-196487 (2001-07-01), None
patent: 2002-016194 (2002-01-01), None
patent: 2002-329852 (2002-11-01), None
patent: 2003-163342 (2003-06-01), None
patent: 2003-174154 (2003-06-01), None
patent: 2003-197656 (2003-07-01), None
patent: 2003-219284 (2003-07-01), None
patent: 2003179656 (2003-07-01), None
patent: 233685 (2005-06-01), None
patent: 243456 (2005-11-01), None
patent: WO-2005-031875 (2005-04-01), None
Intellectual Property Office, R.O.C., Taiwanese Office Action dated Aug. 27, 2008, issued in corresponding Taiwanese Application No. 94113117. Partial English-language Translation provided.
Japan Patent Office, Office Action mailed in connection with corresponding Japanese Patent Application 2005-330499 on Jan. 13, 2008. Partial English-language Translation provided.
SIPO, Office Action issued by the State Intellectual Property Office of the People's Republic of China in connection with corresponding CN patent application No. 2006-100547288 on Jul. 18, 2008. Partial English-language Translation provided.
USPTO, [CAO] “CTFR” Final Rejection mailed Jan. 6, 2009 in §120 parent U.S. Appl. No. 11/350,759.
USPTO, [CAO] “CTNF” Non-Final Rejection mailed Jun. 11, 2008 in §120 parent U.S. Appl. No. 11/350,759.
USPTO, [CAO] “CTNF” Non-Final Rejection mailed Jun. 12, 2009 in §120 parent U.S. Appl. No. 11/350,759.
USPTO, [CAO] “CTRS” Requirement for Restriction/Election mailed Feb. 11, 2008 in §120 parent U.S. Appl. No. 11/350,759.
European Patent Office, Extended Search Report issued in connection with corresponding European Patent Application No. 06002647.3-1528, on Apr. 18, 2008.
Intellectual Property Office, R.O.C., Taiwanese Office Action dated May 28, 2008, issued in corresponding Taiwanese Application No. 95104709. Partial English-language Translation provided.
Japan Patent Office, Office Action mailed in connection with corresponding Japanese Patent Application 2005-330499 on Jan. 13, 2009. Partial English-language Translation provided.
Cao Phat X
Fujitsu Patent Center
Fujitsu Semiconductor Limited
LandOfFree
Semiconductor device and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method of the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2626445