Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-04-29
2008-04-29
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S784000, C257S774000, C257S734000, C438S125000
Reexamination Certificate
active
07365434
ABSTRACT:
To provide a semiconductor device with high performance and reliability, in which peeling off an interconnection layer caused due to peeling off of a resin film at a land part is suppressed and thus electrical break down is prevented, and an efficient method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate (e.g., a silicon wafer10); an insulating film12formed on the semiconductor substrate10;a conductive layer20formed on the insulating film12,the conductive layer20formed of an interconnection part22and a land part24which connects the interconnection part22to an external terminal40;and a resin film30covering the conductive layer20,wherein the resin film30is in contact with the insulating film12at least at a part of the land part24by passing through the conductive layer20.
REFERENCES:
patent: 5215863 (1993-06-01), Nawata et al.
patent: 2003/0218246 (2003-11-01), Abe et al.
patent: 2004/0004293 (2004-01-01), Murayama
patent: 2002-280486 (2002-09-01), None
patent: 2004-22653 (2004-01-01), None
Chinese Office Action dated Jan. 4, 2008, issued in corresponding Chinese patent application No. 200610094071.8.
Fujitsu Limited
Patton Paul E
Smith Zandra V.
Westerman, Hattori, Daniels & Adrian , LLP.
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