Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-11-13
2010-06-15
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000, C438S221000, C257S510000
Reexamination Certificate
active
07736990
ABSTRACT:
A method for manufacturing a semiconductor device comprising the steps of: forming a first insulating film to be used as a mask for forming a trench region directly above a semiconductor substrate; forming the trench region on the semiconductor substrate using the mask; forming a second insulating film directly above the semiconductor substrate which includes the trench region and the first insulating film so that the second insulating film has a recess above the trench region and a protrusion above the first insulating film; removing the protrusion down to the bottom of the recess as a first removal step; and removing the first insulating film and the second insulating film in accordance with a chemical mechanical polishing method so that the step formed of the recess and protrusion is reduced to 20 nm or less as a second removal step.
REFERENCES:
patent: 2004/0232513 (2004-11-01), Chi et al.
patent: 2006/0134850 (2006-06-01), Lim
patent: 10-189708 (1998-07-01), None
patent: 2002-252279 (2002-09-01), None
patent: 2005-175110 (2005-06-01), None
Doan Theresa T
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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