Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-07-04
2006-07-04
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S552000, C257S560000, C257S564000
Reexamination Certificate
active
07071500
ABSTRACT:
A bipolar semiconductor device including a collector layer covered at a portion of an outer periphery thereof with an insulating film and having a shape extending in an upper direction and a horizontal direction, with a gap being formed between the collector layer and the insulating film, and further including a base layer and an emitter layer disposed over the collector layer, and a manufacturing method of the semiconductor device. Since the collector layer has a shape extending in a portion thereof in the upward direction and the horizontal direction, an external collector region can be deleted, and both the parasitic capacitance and the collector capacitance in the intrinsic portion attributable to the collector can be decreased and, accordingly, a bipolar transistor capable of high speed operation at a reduced consumption power can be constituted.
REFERENCES:
patent: 5610435 (1997-03-01), Watanabe et al.
patent: 7-147287 (1993-11-01), None
patent: 11-233524 (1998-02-01), None
patent: 2000-77419 (1998-08-01), None
Miura Makoto
Shimamoto Hiromi
Washio Katsuyoshi
A. Marquez, Esq. Juan Carlos
Abraham Fetsum
Fisher Esq. Stanley P.
Reed Smith LLP
Renesas Technology Corp.
LandOfFree
Semiconductor device and manufacturing method for the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method for the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method for the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3605870