Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1996-12-05
1998-12-08
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257750, 257758, 257774, 257763, H01L 2348, H01L 2352, H01L 2940
Patent
active
058474668
ABSTRACT:
A semiconductor device having a multilayer interconnection structure, includes a substrate having a metal interconnect layer provided thereon and N number (N being an integer of 2 or greater) of layers of insulating film formed one on top of another on the substrate. Each layer of insulating film has a metal interconnect layer including at least one bonding pad section provided thereon. At least one via hole filled with an electrically conductive material is provided in each of the layers for interconnecting metal interconnect layers. At least one bonding pad connecting hole filled with an electrically conductive material is provided in each of the layers for interconnecting bonding pad sections. The at least one bonding pad connecting hole is no more than twice as large in diameter as a smallest via hole.
REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5149674 (1992-09-01), Freeman, Jr. et al.
patent: 5331204 (1994-07-01), Kuroda et al.
patent: 5404046 (1995-04-01), Matsumoto et al.
Irinoda Mitsugu
Ishida Mamoru
Ito Kazunori
Kuroda Takahiko
Ueno Kaichi
Clark Jhihan B.
Ricoh & Company, Ltd.
Saadat Mahshid D.
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