Semiconductor device and making thereof

Details Semiconductor device and making thereof Semiconductor device and making thereof

2006-07-18

2006-07-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S306000

Reexamination Certificate

active

07078785

ABSTRACT:
By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refractory metal-rich nitride, is formed over a first capping layer formed of a refractory nitride. In addition, a second refractory metal or a refractory metal-rich nitride layer may be formed on the capacitor dielectric. The smoothing layer could also be used in other semiconductor devices, such as transistors between a gate electrode and a gate dielectric.

REFERENCES:
patent: 5747361 (1998-05-01), Ouellet
patent: 5759916 (1998-06-01), Hsu
patent: 6005277 (1999-12-01), Liu
patent: 6099701 (2000-08-01), Liu et al.
patent: 6204069 (2001-03-01), Summerfelt et al.
patent: 6340827 (2002-01-01), Choi
patent: 6358829 (2002-03-01), Yoon
patent: 6821839 (2004-11-01), Chung
patent: 6982230 (2006-01-01), Cabral et al.
patent: 2003/0011043 (2003-01-01), Roberts
patent: 2004/0092073 (2004-05-01), Cabral et al.

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