Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-05-15
1981-04-07
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 15, 357 44, 357 46, 357 86, 357 89, 357 92, H03K 19091, H01L 2704
Patent
active
042609062
ABSTRACT:
A semiconductor device comprises a P type semiconductor substrate; an N type layer buried in the P type substrate; and an N type isolating region extending from the surface of the P type substrate to the N type buried region to provide a P type isolated region in the P type substrate. In the P type isolated region marked off by the N type isolating region is formed a first N type region so as not to contact the N type isolating region and buried region and a P type second region is diffused in the first N type region. A logic circuit is constituted by a first vertical PNP transistor formed of the P type second region, first N type region and P type isolated region and a second vertical NPN transistor formed of the first N type region, P type isolated region and N type buried region.
REFERENCES:
patent: 3427511 (1969-02-01), Rosenzweig
patent: 3667006 (1972-05-01), Ruegg
patent: 3922565 (1975-11-01), Berger et al.
patent: 3969747 (1976-07-01), Tsuyuki et al.
Berger et al., IEEE International Solid-State Circuits Conf., Feb. 1975, Digest of Technical Papers, pp. 172-173.
Peltier, IEEE ISSCC, Feb. 1975, Dig. Tech. Papers, pp. 168-169.
Nakai Masanori
Tokumaru Yukuya
Larkins William D.
Tokyo Shibaura Electric Co. Ltd.
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