Semiconductor device and logic circuit constituted by the semico

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 15, 357 44, 357 46, 357 86, 357 89, 357 92, H03K 19091, H01L 2704

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042609062

ABSTRACT:
A semiconductor device comprises a P type semiconductor substrate; an N type layer buried in the P type substrate; and an N type isolating region extending from the surface of the P type substrate to the N type buried region to provide a P type isolated region in the P type substrate. In the P type isolated region marked off by the N type isolating region is formed a first N type region so as not to contact the N type isolating region and buried region and a P type second region is diffused in the first N type region. A logic circuit is constituted by a first vertical PNP transistor formed of the P type second region, first N type region and P type isolated region and a second vertical NPN transistor formed of the first N type region, P type isolated region and N type buried region.

REFERENCES:
patent: 3427511 (1969-02-01), Rosenzweig
patent: 3667006 (1972-05-01), Ruegg
patent: 3922565 (1975-11-01), Berger et al.
patent: 3969747 (1976-07-01), Tsuyuki et al.
Berger et al., IEEE International Solid-State Circuits Conf., Feb. 1975, Digest of Technical Papers, pp. 172-173.
Peltier, IEEE ISSCC, Feb. 1975, Dig. Tech. Papers, pp. 168-169.

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