Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-07
2010-12-21
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S288000, C257SE29242
Reexamination Certificate
active
07855383
ABSTRACT:
A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
REFERENCES:
patent: 5311040 (1994-05-01), Hiramatsu et al.
patent: 6297161 (2001-10-01), Sah
patent: 6545356 (2003-04-01), Akram et al.
patent: 6586335 (2003-07-01), Sakata et al.
Chang Jui-Chung
Cheng Tsung-Chi
Chung Hsiang-Hsien
Hsu Hung-Yi
Kuo Ching-Yeh
Bacon & Thomas PLLC
ChungHwa Picture Tubes, Ltd.
Pert Evan
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