Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2008-02-15

2010-02-02

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S783000, C257SE31110, C257SE31127, C438S064000, C438S065000, C438S107000

Reexamination Certificate

active

07656041

ABSTRACT:
A technique for mounting a plurality of electronic parts on one surface of a wiring substrate is provided. A semiconductor device comprises a wiring substrate having connection pads disposed outside a parts mount; a plurality of electronic parts with the first surface having a plurality of electrodes and the second surface fixing; a first underlying insulation layer provided between the connecting pads and the electrodes; a first metal layer formed overlaid on the first underlying insulation layer and providing connections between the connecting pads and the electrodes; a second underlying insulation layer having electrically insulating properties, provided between the respective electrodes of adjacent electronic parts; a second metal layer formed overlaid on the second underlying insulation layer and providing connections between the respective electrodes of adjacent electronic parts; and a first surface insulation layer covering the first metal layer and a second surface insulation layer covering the second metal layer.

REFERENCES:
patent: 2008/0067392 (2008-03-01), Miyaguchi
patent: 2008/0237766 (2008-10-01), Kim
patent: 2009/0117681 (2009-05-01), Maruyama et al.
patent: 2009/0126790 (2009-05-01), Nishi et al.
M. Ohishi, et al., “Si Penetration—A Structure Revolution Chip”, Nikkei Electronics, pp. 81-92 in Oct. 10, 2005 issue, published by Nikkei Business Publications, Inc.

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