Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-10-26
2009-12-22
Rose, Kiesha L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE27111
Reexamination Certificate
active
07635866
ABSTRACT:
Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film1010positioned above a heat absorbing layer1011and a semiconductor film1013of the other region to produce a difference in thermal expansion at the boundary of the outside end1015of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.
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Kawasaki Ritsuko
Nakajima Setsuo
Anya Igwe U
Fish & Richardson P.C.
Rose Kiesha L.
Semiconductor Energy Laboratory Co,. Ltd.
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