Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2004-08-11
2008-10-21
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S510000, C257S506000, C257SE21206, C257SE21546
Reexamination Certificate
active
07439602
ABSTRACT:
A semiconductor device including memory cells isolated by a trench that may be self aligned with a stacked film pattern (7) has been disclosed. The memory cells may be flash memory cells having an active gate film (2) that may be thinner than a gate oxide film (30). The active gate film (2) may be located in a central portion under of a gate electrode (3). The gate oxide film (30) may be located under end portions of the gate electrode (3). In this way, a distance between a shoulder portion of a trench (11) and a gate electrode (3) may be increased. Thus, an electric field concentration in the shoulder portion of the trench (11) may be decreased and memory cell characteristics may be improved.
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Fourson George
NEC Electronics Corporation
Walker Darryl G.
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