Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Reexamination Certificate
2007-02-13
2007-02-13
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
C257S736000, C257S730000, C257S778000, C257SE23039, C438S108000, C438S106000
Reexamination Certificate
active
10973989
ABSTRACT:
A semiconductor device is provided having: a board; a metallization pattern formed on the first face of the board; a first layer formed so as to not cover the first portion of the metallization pattern but to cover the second portion; and a semiconductor chip mounted on the first face of the board and electrically connected with the metallization pattern in the first portion. A resin portion is provided between the semiconductor chip and the board and from there onto the first portion of the metallization pattern outside the semiconductor chip so as to not reach a boundary between the first and second portions. A second layer is provided on the second face of the board so as to overlap the boundary of the metallization pattern and not overlap the resin portion.
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Communication from Japanese Patent Office re: counterpart application, May 9, 2005.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Thai Luan
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