Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2006-10-24
2006-10-24
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S772000, C438S779000, C438S508000
Reexamination Certificate
active
07125754
ABSTRACT:
The present invention has an object of providing a thyristor-type semiconductor device and a manufacturing method for the same which can prevent, even when conventional manufacturing equipment is used, the electrode terminals13, 14from being provided in a significantly tilted state where the electrode terminals13, 14are in contact with the silicon substrate20,and can also prevent the electrode terminals13, 14from being provided in a state where the electrode terminals13, 14come into contact with the silicon substrate20,even when there are warping and undulations in the silicon substrate20.In a semiconductor device of the present invention, the supports11a, 11bare provided on both surfaces of the silicon substrate20using a glass material. When doing so, the support11bis disposed in a part of the boundary between the second N-type layer18and the second P-type layer19that is opposite the side surface22.With this structure, even if the electrode terminals13, 14are tilted when the electrode terminals13, 14are provided, the supports11a, 11bsupport the electrode terminals13, 14from below, so that the electrode terminals13, 14can be prevented from being provided in contact with the silicon substrate20.Also, even when there are warping and undulations in the silicon substrate20,the electrode terminals13, 14can be prevented from being provided in contact with the silicon substrate20.
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Lebentritt Michael
Pompey Ron
Shindengen Electric Manufacturing Co. Ltd.
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