Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1999-01-21
2000-08-29
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257506, 257102, H01L 3300
Patent
active
061112739
ABSTRACT:
It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric conductivity by ion implantation. After a nitride III-V compound semiconductor layer having an electric conductivity is grown, a high resistance region is formed in the nitride III-V compound semiconductor layer by locally implanting boron ions therein. The amount of implanted boron is preferably not less than 1/30, or more preferably not less than 1/15, of the carrier concentration of the nitride III-V compound semiconductor layer. The high-resistance region is used as a device isolating region of an electron moving device or as a current blocking layer of a semiconductor laser.
REFERENCES:
patent: 5929467 (1999-07-01), Kawai et al.
Monin, Jr. Donald L.
Sony Corporation
Wille Douglas A.
LandOfFree
Semiconductor device and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and its manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1252507