Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1995-05-17
1996-12-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257692, H01L 2304
Patent
active
055811230
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having an integrated circuit having a connection electrode on its surface. A substrate mount section, having at least one concave portion on its main surface, is formed to support the semiconductor substrate to be fixed thereto. A first conductive metallic layer is formed on the main surface of the substrate mount section including a surface of the concave portion. A plurality of leads are supported and fixed to a peripheral portion of the main surface of the substrate mount section such that their end portions are opposite to the semiconductor substrate. The end portion of each lead and the connection electrode of the main surface of the semiconductor substrate are connected by a bonding wire. A cap is formed to have at least a first concave portion formed at a position opposite to the concave portion of the substrate mount section on the main surface, and a second concave portion formed at a central portion of the main surface to at least coat the semiconductor substrate, the bonding wire and the end portion of the lead. A second conductive metallic layer is formed on the entire surface of the cap including each surface of the first and second concave portions. One end portion of a column projection section is fixed to the first concave portion of the cap.
REFERENCES:
patent: 4742385 (1988-05-01), Kohnoto
patent: 5006922 (1991-04-01), McShame et al.
patent: 5200366 (1993-04-01), Yamada et al.
Clark S. V.
Crane Sara W.
Kabushiki Kaisha Toshiba
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