Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2011-08-16

2011-08-16

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S724000, C257S787000, C257SE25023

Reexamination Certificate

active

07999376

ABSTRACT:
An object of the present invention is to provide a semiconductor device by packaging a plurality of semiconductor chips three-dimensionally in a smaller thickness, with a smaller footprint, at the lower cost without using any other components and through a simpler manufacturing process of the semiconductor device than with the conventional methods.A flip chip packaging structure is formed by directly connecting a first semiconductor chip (101) reduced in thickness by back grinding and a substrate (105) via a bump electrode (102) to a wiring pattern (106). Also, a second semiconductor chip (103) is formed with an electrode (104) that is higher than the sum of the thickness of the first semiconductor chip (101) and the height of the electrode (102), and the electrode (104) is directly connected to the wiring pattern (106) on the substrate (105), whereby the most-compact three-dimensional semiconductor packaged device is produced.

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