Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1995-06-07

1996-11-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257623, 257506, 257 74, 257197, H01L 2906

Patent

active

055743080

ABSTRACT:
A selective growth mask having a plurality of openings is formed on a semiconductor substrate. Desired epitaxially grown regions are formed on the openings by controlling the upward epitaxial growth from the openings. Two resonance tunnel barrier diodes are formed on respective separated two epitaxially grown regions and connected together. Thereafter, a tunnel barrier diode is formed on the connected two resonance tunnel barrier diodes to form a composite functional element having an SRAM function. A number of composite functional elements can be integrally formed on a semiconductor substrate by selective growth and a small number of fine processes.

REFERENCES:
patent: 4566025 (1986-01-01), Jastrzebski et al.
patent: 4774205 (1988-09-01), Choi et al.
patent: 4837175 (1989-06-01), Caviello
patent: 5045494 (1991-09-01), Choi et al.
patent: 5270245 (1993-12-01), Gaw et al.
Jastrzebski, L. "Soi by CVD: Epitaxial Lateral Overgrowth (ELO) Process-Review", Journal of Crystal Growth, vol. 63, (1983) pp. 493-526.

Affiliated with

Also associated with

Rating

Semiconductor device and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and its manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-564918