Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1990-12-17

1994-10-18

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437191, 437233, 437 48, 437 52, H01L 2120

Patent

active

053568303

ABSTRACT:
A semiconductor device and its manufacturing method are provided in which an epitaxial silicon layer is formed by a selective epitaxial growth method over a semiconductor substrate and a polysilicon layer is formed by an ordinary deposition method on the epitaxial silicon layer and these layers and are formed over a semiconductor device in a continuous process within the same furnace for a CVD apparatus.

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Extended Abstracts/Electrochemical Society, vol. 87-2, 1987, abstract 1086, pp. 1512-1513, Princeton, N.J., U.S.; A. S. Yue et al., "Growth Mechanism of Episilicon Film on SiO.sub.2 Surface".

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