Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1989-01-17

1989-08-29

James, Andrew J.

357 52, 357 65, 357 71, H01L 4500, H01L 2348, H01L 2702

Patent

active

048622273

ABSTRACT:
The present invention relates to a semiconductor device manufactured by removing a part of a semiconductor layer containing an amorphous semiconductor and which is formed over separate electrodes existing on the same substrate and characterized in that the mean oxygen content of the portion of the semiconductor adjacent the removed portion and 10 .mu.m inward is in a range of 0.5-10 atom %, and to a manufacturing method for the semiconductor device characterized in that the semiconductor layer is removed partly in an oxidative environment by the use of laser ray means. The invention provides semiconductor devices diminished in leak current.

REFERENCES:
patent: 4161744 (1979-07-01), Blaske et al.
patent: 4443651 (1984-04-01), Swartz
patent: 4481230 (1984-11-01), Hanak
patent: 4670088 (1987-06-01), Tsaur et al.

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