Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1997-05-21
1999-12-21
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257557, 257554, 257555, 257556, 257518, 257532, 257574, 257576, 257370, 257256, 257272, 257273, H01L 27082, H01L 2900, H01L 27102, H01L 2980
Patent
active
060052848
ABSTRACT:
A bipolar semiconductor device includes an npn transistor using a base outlet electrode in the form of a polycrystalline Si film and one or more other devices using an electrode in the form of a polycrystalline Si film supported on a common p-type Si substrate, the sheet resistance of the polycrystalline Si film forming the base outlet electrode of the npn transistor is decreased to two thirds of the sheet resistance of the polycrystalline Si film forming at least one electrode of at least one other device. The base outlet electrode can be made by first making the polycrystalline Si film on the entire surface of the substrate, then applying selective ion implantation of Si to a selective portion of the polycrystalline Si film for making the base outlet electrode to change it into an amorphous state, and then annealing the product to grow the polycrystalline Si film by solid-phase growth.
Ammo Hiroaki
Ejiri Hirokazu
Miwa Hiroyuki
Loke Steven H.
Sony Corporation
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