Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-10-23
2007-10-23
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S773000, C257SE23019, C438S628000
Reexamination Certificate
active
10962109
ABSTRACT:
A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.
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Horio Naochika
Tsuchiya Masahiko
Cao Phat X.
Frishauf Holtz Goodman & Chick P.C.
Kalam Abul
Stanley Electric Co. Ltd.
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