Semiconductor device and its manufacture method

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S118000, C438S067000, C438S166000, C438S487000, C438S149000, C438S097000

Reexamination Certificate

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06893941

ABSTRACT:
A semiconductor device formed by cutting a first substrate and a second substrate bonded together by a spacer, wherein: the spacer is disposed at an end of the first substrate after cutting; the second substrate is a semiconductor wafer formed with a light reception element or elements; and the first substrate has an optical element or an optical element set for converging light on the light reception element or elements. A method of manufacturing such a semiconductor device. A semiconductor device manufacture method includes: a step of detecting a warp of a semiconductor substrate; a step of holding the semiconductor substrate on a base under a condition that the warp is removed; a step of bonding an opposing substrate to the semiconductor substrate; and a step of cutting the opposing substrate, wherein the opposing substrate bonded to the semiconductor substrate is set with a size corresponding to the warp of the semiconductor substrate or with a gap to an adjacent opposing substrate.

REFERENCES:
patent: 4375018 (1983-02-01), Petersen
patent: 4729640 (1988-03-01), Sakata
patent: 4732599 (1988-03-01), Bennion
patent: 4824073 (1989-04-01), Zdeblick
patent: 4911968 (1990-03-01), Higasihara et al.
patent: 5146671 (1992-09-01), Ogawa et al.
patent: 5340978 (1994-08-01), Rostoker et al.
patent: 5629787 (1997-05-01), Tsubota et al.
patent: 5677749 (1997-10-01), Tsubota et al.
patent: 5751492 (1998-05-01), Meyers
patent: 5886971 (1999-03-01), Feldman et al.
patent: 5981945 (1999-11-01), Spaeth et al.
patent: 6059188 (2000-05-01), diFazio et al.
patent: 6122009 (2000-09-01), Ueda
patent: 6304243 (2001-10-01), Kondo et al.
patent: 6613443 (2003-09-01), Komatsu et al.
patent: 6627814 (2003-09-01), Stark
patent: 20020062787 (2002-05-01), Hashizume et al.
patent: 1135660 (1996-11-01), None
patent: 1 067 779 (2001-01-01), None
patent: 9-27606 (1997-01-01), None
patent: 11-32169 (1999-02-01), None
patent: 11-121653 (1999-04-01), None
patent: 11-142611 (1999-05-01), None
patent: 11-345785 (1999-12-01), None
patent: 2000-61677 (2000-02-01), None
patent: 2001-78213 (2001-03-01), None
patent: 2001-78217 (2001-03-01), None

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