Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2006-03-22
2010-12-07
Luu, Chuong A (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S618000, C257SE21506
Reexamination Certificate
active
07847316
ABSTRACT:
A reliable semiconductor device is provided which comprises lower and upper IGBTs1and2preferably bonded to each other by solder, and a wire strongly connected to lower IGBT1. The semiconductor device comprises a lower IGBT1, a lower electrode layer5secured on lower IGBT1, an upper electrode layer6secured on lower electrode layer5, an upper IGBT2secured on upper electrode layer6, and a solder layer7which connects upper electrode layer6and upper IGBT2. Lower and upper electrode layers5and6are formed of different materials from each other, and upper electrode layer6has a notch36to partly define on an upper surface5aof lower electrode layer5a bonding region15exposed to the outside through notch36so that one end of a wire8is connected to bonding region15. Upper electrode layer6can be formed of one material superior in soldering, and also, lower electrode layer5can be formed of another material having a high adhesive strength to wire8.
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Bachman & LaPointe P.C.
Doan Nga
Luu Chuong A
Sanken Electric Co. Ltd.
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