Semiconductor device and its manufacture

Details Semiconductor device and its manufacture Semiconductor device and its manufacture

2007-01-02

2007-01-02

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

C257S030000, C257S038000, C257S039000

Reexamination Certificate

active

10707525

ABSTRACT:
In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain regions are formed, and contact holes are formed. Side wall spacers of the MIS transistor in the logic area are made of silicon oxide. A semiconductor device of logic-memory can be manufactured by a reduced number of manufacture processes while the transistor characteristics are stabilized and the fine patterns in the memory cell are ensured.

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