Semiconductor device and its manufacture

Details Semiconductor device and its manufacture Semiconductor device and its manufacture

1998-12-21

2000-09-19

Wilczewski, Mary

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438734, 438957, 438962, 438738, 438739, 438585, H01L 2128, H01L 21302, H01L 3213

Patent

active

061211575

ABSTRACT:
A substrate has an insulating surface; a fine wire region disposed on the insulating surface of the substrate and extending long in one direction; a first insulating film formed on the fine wire region at least at a partial area along the longitudinal direction of the fine wire region; and a first micro box region formed on the first insulating film over the fine wire region at a partial area along the longitudinal direction of the fine wire region a semiconductor device. The semiconductor device has a fine wire region and a micro box region to realize control of a single electron level. The manufacturing method for the semiconductor device is also disclosed.

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patent: 5372675 (1994-12-01), Wakabayashi et al.
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patent: 5600163 (1997-02-01), Yano et al.
patent: 5604154 (1997-02-01), Takahashi et al.
patent: 5691552 (1997-11-01), Oyama
patent: 5714766 (1998-02-01), Chen et al.

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