Semiconductor device and its fabrication method

Details Semiconductor device and its fabrication method Semiconductor device and its fabrication method

1994-03-07

1995-09-19

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257 77, 257133, 257138, 257212, 257347, 257378, 257341, H01L 2968

Patent

active

054517982

ABSTRACT:
A semiconductor device comprises an insulating region residing adjacent to a first semiconductor region, a control electrode residing via the insulating region, a second semiconductor region and a third semiconductor region, which have an opposite conduction type to that of the first semiconductor region, residing adjacent to and carrying therebetween the first semiconductor region. When the first, second and third semiconductor regions and the control electrode are grounded, the first semiconductor region in contact with the insulating layer is adjusted to be in weak inversion state, and the potential of the control electrode and that of the first semiconductor region are electrically coupled to be operable.

REFERENCES:
patent: 5126169 (1992-06-01), Ishihara et al.
patent: 5126806 (1992-06-01), Sakurai et al.
"High-Gain Lateral Bipolar Action in a MOSFET Structure", Sophie Verdonct-Vandebroek et al., IEEE Trans. on Electron Devices, vol. 38, No. 11, Nov. 1991, pp. 2487-2496.
"High-Gain Lateral P-N-P Bipolar Action in a P-MOSFET Structure", Sophie Verdonckt-Vanderbroek, et al., IEEE Trans. on Electron Devices, vol. 13, No. 6, Jun. 1992, pp. 312-313.
"An SOI Voltage-Controlled Bipolar-MOS Device", Jean-Pierre Colinge, IEEE Trans. on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 845-849.
"A Versatile, SOI BiCMOS Technology With Complementary Lateral BJI's", Stephen Parke et al., IEDM, 1992, pp. 33-35.
"A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX", Stephen Parke et al., IEEE Trans. Electron Device Letters, vol. EDL-14, No. 1, Jan. 1993, pp. 33-35.

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