Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...
Patent
1993-12-10
1996-01-02
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
257 66, 257192, 257197, 257588, H01L 2702
Patent
active
054811201
ABSTRACT:
Disclosed is a semiconductor device using a polycrystalline compound semiconductor with a low resistance as a low resistance layer, and its fabrication method. The above polycrystalline compound semiconductor layer is doped with C or Be as impurities in a large amount, and is extremely low in resistance. The polycrystalline compound semiconductor layer is formed by either of a molecular beam epitaxy method, an organometallic vapor phase epitaxy method and an organometallic molecular beam epitaxy method under the condition that a substrate temperature is 450.degree. C. or less and the ratio of partial pressure of a V-group element to a III-group element is 50 or more. In the case that the above polycrystaline compound semiconductor layer with a low resistance is used as an extrinsic base region of an heterojunction bipolar transistor, since the extrinsic base region can be formed on a dielectric film formed on a collector, it is possible to reduce the base-collector capacitance, and hence to enhance the operational speed of the heterojunction bipolar transistor.
REFERENCES:
patent: 5214497 (1993-05-01), Nanba et al.
Journal of Applied Physics, vol. 51 #7 Jul. 1980 pp. 3794-3800 by Yang et al.
IEEE Electron Device Letters, vol. 5 #8 Aug. 1984 pp. 310-312 by Asbech et al.
Applied Physics Letters, vol. 56 #20 May 1990 pp. 1942-1944 by Yoo et al.
Fujisaki Yoshihisa
Haga Tooru
Masuda Hiroshi
Mishima Tomoyoshi
Mochizuki Kazuhiro
Hitachi , Ltd.
Prenty Mark V.
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