Semiconductor device and its fabrication

Details Semiconductor device and its fabrication Semiconductor device and its fabrication

1984-05-09

1987-11-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 59, H01S 319

Patent

active

047062541

ABSTRACT:
A semiconductor device is constructed with a monocrystalline semiconductor layer laminated in a strip-pattern on a substrate, and amorphous or polycrystalline semiconductor layer formed on the substrate in a manner to encompass the monocrystalline semiconductor layers. The monocrystalline semiconductor layer comprises a plurality of layers including a laser active layer.

REFERENCES:
patent: 4230997 (1980-10-01), Hartman et al.
patent: 4464762 (1984-08-01), Furuya
patent: 4523961 (1985-06-01), Hartman et al.
Chen et al, "Narrow Double-Current-Confinement Channeled-Substrate Planar Laser Fabricated by Double Etching Technique", Appl. Phys Lett 36(8), Apr. 15, 1980, pp. 634-636.

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